SiGe BiCMOS technology for mm-wave, THz and fiber-optic communication systems
This talk gives an overview of IHP’s high-performance 130nm SiGe BiCMOS technologies with hetero-bipolar transistors up to 500 GHz maximum oscillation frequency. The roadmap for further improvement of this performance will be presented. Based on BiCMOS technologies, examples for innovative radar solutions at 120 GHz and 158 GHz are introduced and discussed. Furthermore, an example chipset for wireless communication at 240 GHz developed in IHP’s technologies will be shown. A novel technology for monolithic co-integration of silicon photonics with high-performance SiGe BiCMOS will be presented. Bipolar transistors with 210 GHz transit frequency and 290 GHz maximum oscillation frequency are provided, together with the full set of photonic components of IHP’s photonic platform, including high-bandwidth, high-responsivity Ge photodiodes. Recent results demonstrating the suitability of this technology for high-speed fiber-optic communication systems will be highlighted. The developments demonstrate the capability of our electro-optical technology for 400G systems.